Electronic transport across extended grain boundaries in graphene

Abstract Owing to its superlative carrier mobility and atomic thinness, graphene exhibits great promise for interconnects in future nanoelectronic integrated circuits. Chemical vapor deposition (CVD), the most popular method wafer-scale growth of graphene, produces monolayers that are polycrystalline, where misoriented grains separated by extended grain boundaries (GBs). Theoretical models GB resistivity focused on small sections an GB, assuming it be a straight line, predicted strong dependence misorientation angle. In contrast, measurements produced values much narrower range without pronounced angle dependence. Here we study electron transport across rough GBs, which composed short segments connected together into GB. We found that, due zig-zag nature there always exist few divide crystallographic between two symmetrically provide highly conductive path current flow GBs. The presence 10 2 4 Ω μ m regardless An with large roughness correlation length has order 3 m, even mismatched asymmetric effective slope given ratio lateral length, is universal quantifier resistivity. Our results demonstrate probability finding diminishes could cause variation narrow ribbons etched from polycrystalline graphene. also uncover spreading resistance bending through show scales linearly resistance. will crucial designing graphene-based